Ferroelectric Field Effect Transistor

02-05-2021
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  1. Ferroelectric Field Effect Transistors Based On Pzt And Igzo
  2. Ferroelectric Field Effect Transistors For Memory Applications
'FERROELECTRICS NEW RESEARCH '; 'FERROELECTRICS NEW RESEARCH '; 'CONTENTS '; 'PREFACE '; 'APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR '; 'ABSTRACT '; '1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR '; 'Retention '; 'Leakage Current '; 'Depolarization Field'; 'Disturbance '; '2. STUDY FOR FEFET '; '2.1. Improvement of Ferroelectric Materials for MFIS FeFET '; '2.1.1. Photochemical Metal-Organic Deposition (PMOD) '; '2.1.1.1. Application of PMOD to the Formation of PZT Thin Films' '2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films ''2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) '; '2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films '; '2.1.3. Composition Control in the Chemical Solution Process '; '2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films '; '2.1.4. The Effect of Film Thickness and Annealing Temperature '; '2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties ' '2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure ''2.1.5. Element Substitution in Ferroelectric Materials '; '2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films '; '2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films '; '2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents '; '2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios ' '2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ ''2.1.6. Ferroelectric Multilayer Structure'; '2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films '; '2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films'; '2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor '; '2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films ' '2.2. Study on the Improvement of Retention Property in MFIS-FeFET ''2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET '; '2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET '; 'CONCLUSION '; 'REFERENCES '; 'RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS '; 'ABSTRACT'; '1. INTRODUCTION '; '2. EXPERIMENTAL METHODS '; '2.1. Resonant Microwave Absorption Measurement (EPR Technique) '; '2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) '; '3. MULTIFERROIC MATERIALS STUDIES 'Effect

Ferroelectric Field Effect Transistors Based On Pzt And Igzo

The ferroelectrictransistordeviceproperties are derived by combining the siliconcharge‐sheet model of metal‐oxide‐semiconductor field‐effect transistordeviceoperation with Maxwell’sfirst equationwhich describes the properties of the ferroelectricfilm. Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (eds.) download Z-Library. Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron.

Ferroelectric Field Effect Transistors For Memory Applications

  1. Field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for.
  2. Field effect transistors with insulated gate. Let’s consider the MDS-transistor with an induced channel of the n-type.